From BigGo Finance · BigGo Finance · · 1m 40s
DRAM 4F² Race: Samsung, SK Lead as Micron Sticks to 6F²
Samsung and SK Hynix advance 4F² DRAM while Micron shifts to 6F² with wafer bonding and 3D stacking.
In brief
Samsung and SK Hynix advance 4F² DRAM while Micron shifts to 6F² with wafer bonding and 3D stacking. Samsung and SK Hynix target 4F² mass production by 2027-2028, while Micron pivots to 6F² extensions and 3D stacking. Originally reported by BigGo Finance.
4F² Technology Race
Samsung, SK Hynix and ChangXin Memory Technologies accelerate 4F² commercialization while Micron abandons it for 6F² extensions.
“Samsung Electronics, SK Hynix and China's ChangXin Memory Technologies (CXMT) are racing to commercialize 4F², while Micron Technology has officially abandoned the structure over cost and process complexity and shifted toward extending its existing 6F² design”
Micron's 4F² Decision
Micron formally abandoned 4F² on the 21st citing cost and process complexity, shifting to 6F² with wafer bonding and 3D stacking.
“Micron made its decision not to adopt 4F² clear on the 21st (local time) at a technology webinar”
Samsung's 4F² Strategy
Samsung pursues vertical channel transistors, IGZO materials and wafer bonding for 4F² commercialization by 2027-2028.
“Samsung Electronics plans to advance vertical channel transistors while conducting research into new oxide semiconductor (IGZO) materials in parallel”
SK Hynix's 4F² Approach
SK Hynix focuses on 4F² vertical gate platform with wafer bonding and long-term 3D DRAM for 2027-2028 production.
“SK Hynix has put its "4F² VG (vertical gate) platform" front and center”
CXMT's 4F² Path
CXMT uses 4F² vertical gate with 12-inch hybrid bonding to target 30-50% density increase and lower EUV reliance.
“It has chosen a method that combines a vertical gate structure with 12-inch wafer-level hybrid bonding to manufacture the peripheral logic circuits and cell array separately”
CXMT's Timeline
CXMT aims to qualify server DDR5 RDIMMs using 4F² by year-end, with LPDDR6 mobile products already introduced.
“CXMT plans to select server DDR5 RDIMMs as its first 4F² product and begin customer qualification within the year”
Micron's 2027 Production
Micron begins mass production of 1-delta DRAM in Boise, Idaho, in late 2027 with wafer bonding for 1-epsilon DRAM.
“Micron will begin mass production of next-generation 1-delta (1δ) DRAM in Boise, Idaho, in the second half of 2027”
NAND Market Shift
YMTC overtakes Samsung in China's domestic NAND market with 38.7% share versus Samsung's 33.4% as of Q2 2024.
“In the Chinese domestic market, YMTC led Samsung Electronics (33.4%) with 38.7% as of the second quarter”
Market Reaction
Samsung and SK Hynix shares rose 6% in South Korean trading on the 21st following the announcements.
“In South Korean stock trading on the 21st, when the related reports were published, shares of Samsung Electronics and SK Hynix rose about 6%”
2027-2028 Outcome
The 4F² race will determine DRAM cost competitiveness and density by 2027-2028, with yield and cost as key factors.
“If the South Korean companies solve the capacitor spacing and leakage current problems and succeed in mass-producing 4F² around 2027-2028”
Here's the gist
Samsung and SK Hynix target 4F² mass production by 2027-2028, while Micron pivots to 6F² extensions and 3D stacking.
